2004 Jan 14 2
NXP Semiconductors
Product data sheet
High-speed double diode BAV74
FEATURES
?
Small plastic SMD package
?
High switching speed: max.
4
ns
?
Continuous reverse voltage: max.
50
V
?
Repetitive peak reverse voltage: max.
60
V
?
Repetitive peak forward current: max.
450
mA.
APPLICATIONS
?
High-speed switching in thick and thin-film circuits.
DESCRIPTION
The BAV74 consists of two high-speed switching diodes
with common cathodes, fabricated in planar technology,
and encapsulated in a small SOT23 plastic SMD package.
MARKING
Note
1. *
=
p
:
Made in Hong Kong.
*
=
t
:
Made in Malaysia.
*
=
W:
Made in China.
PINNING
TYPE NUMBER
MARKING CODE(1)
BAV74
JA*
PIN
DESCRIPTION
1
anode
(a1)
2
anode
(a2)
3
cathode
Fig.1 Simplified outline (SOT23) and symbol.
lumns
21
3
Top view
MAM108
21
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC
60134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VRRM
repetitive peak reverse
voltage
?
60
V
VR
continuous reverse voltage
?
50
V
IF
continuous forward current
single diode loaded; note
1; see
Fig.2
?
215
mA
double diode loaded; note
1; see
Fig.2
?
125
mA
IFRM
repetitive peak forward current
?
450
mA
IFSM
non-repetitive peak forward
current
square wave; Tj
=
25
°C prior to surge; see
Fig.4
t
=
1
μs
?
4
A
t
=
1
ms
?
1
A
t
=
1
s
?
0.5
A
Ptot
total power dissipation
Tamb
=
25
°C; note
1
?
250
mW
Tstg
storage temperature
?65
+150
°C
Tj
junction temperature
?
150
°C
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